2PC4081 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

Product specification
2PC4081
Features
High current (max. 100 mA)
Low voltage (max. 40 V)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
50
V
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
Total power dissipation *
IBM
200
mA
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PC4081Q
2PC4081R
2PC4081S
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
* Pulse test: tp 300 ìs; ä 0.02.
hFE Classification
Symbol
Testconditons
ICBO IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150
IEBO IC = 0; VEB = 4 V
hFE IC = 1 mA; VCE = 6 V
VCE(sat) IC = 50 mA; IB = 5 mA; *
Cc IE = ie = 0; VCB = 12 V; f = 1 MHz
fT IC = 2 mA; VCE = 12 V; f = 100 MHz
TYPE
Marking
2PC4081Q
ZQ
2PC4081R
ZR
2PC4081S
ZS
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
100 nA
5 ìA
100 nA
120
270
180
390
270
560
400 mV
2 3.5 pF
100
MHz
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