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2N7002V Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product specification
SOT-563 Plastic-Encapsulate MOSFETS
2N7002V MOSFET (N-Channel)
SOT-563
FEATURES
∙ Dual N-channel MOSFET
∙ Low on-resistance
∙ Low gate threshold voltage
1
∙ Low input capacitance
∙ Fast switching speed
∙ Low input/output leakage
Marking: KAS
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS
Drain-Source voltage
60
V
ID
Drain Current
115
mA
PD
Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING TIME
Turn-on Time
Turn-off Time
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
ID(ON)
rDS(0n)
gfs
VDS(on)
VSD
Ciss
COSS
CrSS
Test conditions
VGS=0 V, ID=10 µA
VDS=VGS, ID=250 µA
VDS=0 V, VGS=±25 V
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7 V
VGS=10 V, ID=500mA
VGS=5 V, ID=50mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0 V
VDS=25V, VGS=0V, f=1MHz
td(on)
td(off)
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
Min
60
1
500
1
1
80
0.5
0.05
0.55
Typ Max Unit
V
±80
nA
80
nA
mA
7.5
Ω
7.5
500
mS
3.75
V
0.375
V
1.2
V
50
25
pF
5
20
ns
40
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