2N7002T Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SMD Type
■ Features
● Low On-Resistance
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
● Ultra-Small Surface Mount Package
TraMnOsiSsFtIoECrTs
Product specification
2N7002T
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
1.Gate
2.Soruce
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Drain-Source voltage
VDS
Gate-Source Voltage
VGS
Drain Current - Continuous
ID
- Pulsed Note(1)
Power dissipation
@ TA = 25℃
PD
Operating and storage junction temperature range
TJ, Tstg
Notes: 1. Pulse width limited by maximum junction temperature.
Rating
60
±20
115
800
0.15
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Symbol
V(BR)DSS
VGS(th)
lGSS
Test conditons
VGS=0 V, ID=10μA
VDS=VGS, ID=250μA
VDS=0 V, VGS=±20 V
Zero gate voltage drain current
On-state drain current
Drain-source on-resistance
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
IDSS
ID(ON)
RDS(on)
gts
Ciss
Coss
Crss
td(on)
td(off)
VDS=60 V, VGS=0 V
TC = 125℃
VGS=10 V, VDS=7.5 V
VGS=10 V, ID=500 mA @Tj = 125℃
VGS=5 V, ID=50 mA
VDS=10 V, ID=200 mA
VDS=25 V, VGS=0 V, f=1 MHz
VDD = 30 V, RL = 150 Ω
ID =0.2 A, VGEN = 10 V, RG = 25Ω
Unit
V
V
mA
W
℃
Min Typ Max Unit
60
V
1 1.76 2
±10 nA
1
μA
500
0.5
A
13.5
Ω
7.5
80
ms
22 50
11 25 pF
2
7
7.0 20 ns
11 20 ns
■ Marking
Marking
702
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1