2N7002KW Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

Product specification
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW N-Channel MOSFET
FEATURE
z High density cell design for Low R_DS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected up to 2KV
SOT-323
1. GATE
2. SOURCE
3. DRAIN
MARKING: 72K
MOSFET MAXIMUM RATINGS (T_a=25Я unless otherwise noted)
Symbol
V_DS
I_D
I_DM
P_D
T_j
T_stg
R_șJA
Parameter
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance from Junction to Ambient
Value
60
340
800
0.2
150
-55~+150
625
Unit
V
mA
mA
W
Я
Я
Я/W
Equivalent circuit
D
G
S
http://www.twtysemi.com
[e-mail]
4008-318-123
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