2N7002KDW Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

Product specification
SOT-363 Plastic-Encapsulate MOSFETS
2N7002KDW N-channel MOSFET
FEATURES
z High density cell design for Low R_DS（_on）
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected up to 2KV
Marking: 72K
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Units
VDS
Drain-Source voltage
60
V
ID
Drain Current
340
mA
PD
Power Dissipation
0.15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
RθJA
Thermal Resistance fromJunction to Ambient 833
℃ /W
SOT-363
1
Equivalent circuit
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Static Characteristics
Drain-Source Breakdown Voltage
VDS
VGS = 0V, ID =250µA
60
Gate Threshold Voltage*
VGS(th) VDS =VGS, ID =1mA
1
Zero Gate Voltage Drain Current
Gate –Source leakage current
IDSS
IGSS1
VDS =48V,VGS = 0V
VGS =±20V, VDS = 0V
Drain-Source On-Resistance*
RDS(on)
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
Diode Forward Voltage
VSD
VGS=0V, IS=300mA
Max Units
V
V
1
µA
±10 µA
5.3
Ω
5
Ω
1.5
V
Recovered charge
Q_r
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
GATE-SOURCE ZENER DIODE
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
t_d(on)
t_d(off)
t_rr
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain)
Notes :
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
30
nC
40 pF
30
pF
10
pF
10
ns
15
ns
30
ns
±21.5
±30
V
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