2N7002K Datasheet, PDF (1/3 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SDSMMIPDDTTTTyypyypppeeee
MMOOSSFFIEECTT
Product specification
2N7002K
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Drain
Gate
Gate
Protection
Diode
Source
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta=25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
20
V
DrainCurrent (Note 1)
-Continuous
ID
-Pulsed (Note 2)
300
mA
800
mA
PowerDissipation (Note 1)
PD
350
mW
Thermal Resistance, Junction to Ambient
R JA
357
W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes: 1. Device mounted on FR-4 PCB.
2. Pulse width £10mS, Duty Cycle £1%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain-Source Breakdown Voltage (Note 3)
VDSS VGS = 0V, ID = 10 A
Zero Gate Voltage Drain Current (Note 3)
IDSS VDS = 60V, VGS = 0V
Gate-Body Leakage (Note 3)
Gate Threshold Voltage (Note 3)
IGSS
VGS(th)
VGS = 20V, VDS = 0V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance (Note 3)
Forward Transfer Admittance (Note 3)
RDS (ON)
|Yfs|
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VGS = 10V, VDS = 0 .2A
Input Capacitance
Ciss
Output Capacitance
Coss VDS = 25V, VGS = 0V,f = 1.0MHz
Reverse Transfer Capacitance
Crss
Note: 3. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
702.
Min Typ Max Unit
60
V
1.0
A
10 A
1.0 1.6 2.5 V
2.0
3.0
80
ms
50 pF
25 pF
5.0 pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3