2N7002E Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel TrenchMOS FET

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Product specification
2N7002E
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0 m
Gate-Source Voltage -Continuous
Pulsed
Drain Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25
@ TC = 125
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Marking
Marking
K7B
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Symbol
Rating
Unit
VDSS
60
V
VDGR
60
V
VGSS
20
V
40
ID
240
mA
PD
300
mW
R JA
417
W
Tj, TSTG
-55 to +150
0.1+0.05
-0.01
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Symbol
Testconditons
Min
VDSS VGS = 0V, ID = 10 A
60
IDSS VDS = 60V, VGS = 0V
IGSS VGS = 15V, VDS = 0V
VGS(th) VDS = VGS, ID = 250mA
1.0
VGS = 10V, ID = 250mA
RDS (ON)
VGS = 4.5V, ID = 200mA
ID(ON) VGS = 10V, VDS = 7.5V
0.8
gFS VDS =10V, ID = 0.2A
80
Ciss
Coss VDS = 25V, VGS = 0V,f = 1.0MHz
Crss
tD(ON)
tD(OFF)
VDD = 30V, ID = 0.2A,RL = 150 ,VGEN
= 10V,RGEN = 25
Typ Max Unit
70
V
1.0
A
500
10 nA
2.5 V
1.6 3
2.0 4
1.0
A
mS
22 50 pF
11 25 pF
2.0 5.0 pF
7.0 20 ns
11 20 ns
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