2N7000 Datasheet, PDF (1/1 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

■ Features
● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
Product specification
2N7000
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
1.Gate
2.E₂m_.Sitt_oe_rr_uce
3.co³l^.l^Dec^rt^aorⁱⁿ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Drain-Source voltage
VDS
Gate-Source Voltage
VGS
Drain Current - Continuous
ID
- Pulsed Note(1)
Power dissipation
@ TA = 25℃
PD
Operating and storage junction temperature range
TJ, Tstg
Notes: 1. Pulse width limited by maximum junction temperature.
Rating
Unit
60
V
±20
V
200
mA
500
0.4
W
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-source on-resistance
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
■ Marking
Marking
702
Symbol
V(BR)DSS
VGS(th)
lGSS
IDSS
ID(ON)
RDS(on)
gts
Ciss
Coss
Crss
td(on)
td(off)
Test conditons
VGS=0 V, ID=10 μA
VDS=VGS, ID=1mA
VDS=0 V, VGS=±20 V
VDS=48 V, VGS=0 V
TC = 125℃
VGS=4.5 V, VDS=10 V
VGS=10 V, ID=500 mA
VGS=4.5 V, ID=75 mA
VDS=10 V, ID=200 mA
VDS=25 V, VGS=0 V, f=1 MHz
VDD = 15 V, RL = 25 Ω
ID =0.5 A, VGEN = 10 V, RG = 25Ω
Min Typ Max Unit
60
V
0.8 2.1 3
±100 nA
1 μA
1000 μA
0.35 0.075 A
5
Ω
5.3
100
ms
22 60
11 25 pF
2
5
10 ns
10 ns
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