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| 2N6727 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N6727 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-40
-5
-1.5
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -1mA,IE=0
-50
V
V(BR)CEO IC=-10mA,IB=0
-40
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-0.1
μA
ICEO
VCE=-40V,IE=0
-1
μA
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-1A
50
250
hFE(2)
VCE=-1V, IC=-10mA
55
hFE(3)
VCE=-1V, IC=-100mA
60
VCE(sat) IC=-1A,IB=-100mA
-0.5
V
VBE
VCE=-1V, IC=-1A
-1.2
V
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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