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| 2N6718 Datasheet, PDF (1/1 Pages) Unisonic Technologies – NPN GENERAL PLANAR TRANSISTOR | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N6718 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
100
5
1
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)*
hFE(2) *
hFE(3) *
VCE(sat)(1) *
VCE(sat)(2) *
VBE*
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=100V,IE=0
VEB=5V,IC=0
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
IC=250mA,IB=10mA
IC=250mA,IB=25mA
VCE=1V, IC=250mA
VCB=10V, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
100
V
100
V
5
V
1
μA
1
μA
80
50
250
20
0.5
V
0.35
V
1.2
V
30
pF
50
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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