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| 2N6520 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N6520 TRANSISTOR (PNP)
FEATURES
z Complement to 2N6517
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-350
-350
-5
-0.5
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=- 0.1mA,IE=0
-350
V
Collector-emitter breakdown voltage
V(BR)CEO* IC=-1mA,IB=0
-350
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.01mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-250V,IE=0
-0.05 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.05 μA
VCE=-10V, IC=-1mA
20
VCE=-10V, IC=-10mA
30
DC current gain
hFE
VCE=-10V, IC=-30mA
30
200
VCE=-10V, IC=-50mA
20
200
VCE=-10V, IC=-100mA
15
IC=-10mA,IB=-1mA
-0.3
V
Collector-emitter saturation voltage
VCE(sat)
IC=-20mA,IB=-2mA
IC=-30mA,IB=-3mA
-0.35
V
-0.5
V
IC=-50mA,IB=-5mA
-1
V
IC=-10mA,IB=-1mA
-0.75
V
Base-emitter saturation voltage
VBE (sat) IC=-20mA,IB=-2mA
-0.85
V
IC=-30mA,IB=-3mA
-0.9
V
Base-emitter voltage
Transition frequency
VBE
VCE=-10V, IC=-100mA
fT*
VCE=-20V,IC=-10mA,f=20MHz 40
-2
V
200 MHz
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
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