2N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

SDSMMIPDDTTTTyypyypppeeee
Features
RDS(ON) = 3.8 @VGS = 10V.
Low gate charge ( typical 9.0 nC).
Low Crss ( typical 5.0 pF).
Fast switching capability.
Avalanche energy specified
Improved dv/dt capability.
MMOOSSFFIEECTT
Product specification
2N60
TO-220
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
Drain Current - Continuous (TC = 25 )
----------------- Continuous (TC = 100 )
Drain Current - Pulsed * 1
VGSS
ID
IDP
30
2.0
1.26
8.0
Single Pulsed Avalanche Energy * 2
EAS
140
Avalanche Current * 1
IAR
2.0
Repetitive Avalanche Energy * 1
EAR
4.5
Peak Diode Recovery dv/dt * 3
Power Dissipation (TC = 25 )
-------- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
dv/dt
PD
TJ, Tstg
TL
4.5
44
0.36
-55 to +150
300
Thermal Resistance, Junction-to-Case
RèJC
4
Thermal Resistance, Junction-to-Ambient
RèJA
54
* 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
* 2. L = 64mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25
* 3. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
/W
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2