2N5832 Datasheet, PDF (1/1 Pages) Micro Commercial Components – NPN Transistor Plastic-case Bipolar

Product specification
TO-92 Plastic-Encapsulate Transistors
2N5832 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
TO – 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
160
140
5
600
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_{BE (sat)}
V_BE
C_ob
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.01mA,I_C=0
V_CB=120V,I_E=0
V_EB=4V,I_C=0
V_CE=5V, I_C=10mA
I_C=50mA,I_B=5mA
I_C=50mA,I_B=5mA
V_CE=5V, I_C=1mA
V_CB=10V,I_E=0, f=1MHz
VCE=10V,IC=1mA, f=100MHz
Min Typ Max Unit
160
V
140
V
5
V
0.05 μA
0.05 μA
175
500
0.25
V
1
V
0.8
V
4
pF
100
MHz
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