2N5551 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

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Features
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180V)
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Product specification
2N5551
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
Rating
Unit
VCBO
180
V
VCEO
160
V
VEBO
6
V
IC
0.6
A
Pc
625
mW
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-base breakdown voltage
VCBO IC = 100 ìA, IE = 0
Collector-emitter breakdown voltage *
VCEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO IE = 10 ìA, IC = 0
Collector cutoff current
ICBO VCB = 120 V, IE = 0
Emitter cutoff current
IEBO VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
DC current gain *
hFE IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage *
IC = 10 mA, IB = 1 mA
VCE(sat)
IC = 50 mA, IB = 5mA
Base-emitter saturation voltage *
IC = 10 mA, IB = 1 mA
VBE(sat)
IC =50 mA, IB = 5 mA
Transiston frequency
fT VCE=10V,IC=10mA,f=100MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
Input capacitance
Cib VBE=0.5V,IC=0,f=1MHz
Noise figure
NF ^{VCE=5V,Ic=0.25mA,f=10Hz to}
15.7KHz,Rs=1k
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
Min Typ Max Unit
180
V
160
V
6
V
50 nA
50 nA
80
80
250
30
0.15
V
0.2
1.0
V
1.0
100
300 MHz
6 pF
20 pF
8 dB
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4008-318-123
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