2N5550 Datasheet, PDF (1/1 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

Product specification
TO-92 Plastic-Encapsulate Transistors
2N5550 TRANSISTOR (NPN)
FEATURES
z Switching and Amplification in High Voltage
z Applications such as Telephony
z Low Current(Max. 600mA)
z High Voltage(Max.160V)
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
160
V
140
V
6
V
0.6
A
0.625
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
breakdown
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CEsat
V_BEsat
f_T
C_ob
NF
Test conditions
I_C=100μA,I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CB=100V,I_E=0
V_EB=4V, I_C=0
V_CE=5V,I_C=1mA
V_CE=5V,I_C =10mA
V_CE=5V,I_C=50mA
I_C= 10mA, I_B=1mA
I_C= 50mA, I_B=5mA
I_C= 10mA, I_B=1mA
I_C= 50mA, I_B=5 mA
V_CE=10V,I_C=10mA,,f=100MHz
V_CB=10V,I_E=0,f=1MHz
V_CE=5V,I_c=0.25mA,
f=1KHZ,Rs=1kΩ
Min Typ
160
140
6
60
60
20
100
Max
0.1
0.05
Unit
V
V
V
μA
μA
250
0.15
0.25
V
1
1.2
V
300 MHz
6
pF
10
dB
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1