2N5401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

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■ Features
● Switching and amplification in high voltage
● Applications such as telephony
● Low current(max. 600mA)
● High voltage(max.150V)
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Product specification
2N5401
TO-92
123
1. Emitter
2. Base
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
Rating
Unit
VCBO
-160
V
VCEO
-150
V
VEBO
-5
V
IC
-600
mA
Pc
625
mW
TJ, Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transiston frequency
Symbol
Test conditions
V(BR)CBO IC = -100 μA, IE = 0
V(BR)CEO IC =- 1.0 mA, IB = 0
V(BR)EBO IE = -10 μA, IC = 0
ICBO VCB =- 120 V, IE = 0
IEBO VEB = -3.0 V, IC = 0
IC = -1.0 mA, VCE = -5 V
hFE IC = -10 mA, VCE = -5 V
IC = -50 mA, VCE = -5 V
VCE(sat) IC = -50 mA, IB = -5.0 mA
VBE(sat) IC = -50 mA, IB = -5.0 mA
fT VCE=-5V,IC=-10mA,f=30MHz
Min Typ Max Unit
-160
V
-150
V
-5
V
-50 nA
-50 nA
50
60
240
50
-0.5 V
-1.0 V
100
300 MHz
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