2N5400 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon)

Product specification
TO-92 Plastic-Encapsulate Transistors
2N5400 TRANSISTOR (PNP)
FEATURE
z Switching and Amplification in High Voltage
Applications such as Telephony
z Low Current(max. 600mA)
z High Voltage(max.130v)
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-130
V
-120
V
-5
V
-0.6
A
0.625
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
Typ
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_CE(sat)
V_BE(sat)
V_BE(sat)
f_T
I_C=-100μA, I_E=0
I_C=-1mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -100 V, I_E=0
V_EB= -3 V, I_C=0
V_CE= -5 V, I_C=-1mA
V_CE= -5 V, I_C= -10mA
V_CE= -5 V, I_C=-50mA
I_C= -10mA, I_B= -1mA
I_C= -50mA, I_B= -5mA
I_C= -10mA, I_B= -1mA
I_C= -50mA, I_B= -5mA
V_CE=-10V, I_C=-10mA
f =30MHz
-130
-120
-5
30
40
40
100
C_ob
V_CB=-10V,I_E=0,f=1MHz
Max Unit
V
V
V
-0.1
μA
-0.1
μA
180
-0.2
V
-0.5
V
-1
V
-1
V
MHz
6
pF
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