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| 2N4403 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N4403 TRANSISTOR (PNP)
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
RRÓ¨Ó¨JAJA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
TThheermrmaal lRReessisistatannccee, ,jujunncctitoionntotoAAmmbbieiennt t
Value
-40
-40
-5
-600
0.625
150
-55 ~ +150
230507
Unit
V
V
V
mA
W
â
â
â/W
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
tf
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-100μA,IC=0
VCB=-35V,IE=0
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-150mA
VCE=-2V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-20mA,f=100MHz
VCB=-10V,IE=0,f=100KHz
VCC=-30V, IC=-150mA
IB1=- IB2=-15mA
TO-92
1. EMILTTER
2. BASE
3. COLLECTOR
Min Typ
-40
-40
-5
30
60
100
100
20
-0.75
200
Max Unit
V
V
V
-100 nA
-100 nA
300
-0.4
-0.75
-0.95
-1.3
8.5
15
20
225
30
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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