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| 2N4400 Datasheet, PDF (1/1 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N4400 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier Transistor
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO IC= 0.1mA,IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
40
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
6
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
VCE=1V, IC=1mA
20
DC current gain
hFE*
VCE=1V, IC=10mA
40
VCE=1V, IC=150mA
50
VCE=2V, IC=500mA
20
Collector-emitter saturation voltage
VCE(sat)*
IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE (sat) *
IC=150mA,IB=15mA
IC=500mA,IB=50mA
0.75
Collector output capacitance
Cob
VCB=5V,IE=0, f=1MHz
Emitter input capacitance
Cib
VEB=5V,IC=0, f=1MHz
Transition frequency
fT
VCE=10V,IC=20mA, f=100MHz 200
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Max
0.1
0.1
150
0.4
0.75
0.95
1.2
6.5
30
Unit
V
V
V
μA
μA
V
V
V
V
pF
pF
MHz
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