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| 2N4126 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N4126 TRANSISTOR (PNP)
FEATURES
z PNP Silicon Epitaxial Transistor for Switching and Amplifier
Applications.
z As Complementary Type, The NPN Transistor 2N4124 is
Recommended.
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-25
-25
-4
-0.2
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2) *
VCE(sat) *
VBE (sat) *
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠1.5%.
Test conditions
IC= -0.01mA,IE=0
IC=-1mA,IB=0
IE=-0.01mA,IC=0
VCB=-20V,IE=0
VEB=-3V,IC=0
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
IC=-50mA,IB=-5mA
IC=-50mA,IB=-5mA
VCB=-5V,IE=0, f=1MHz
VCE=-20V,IC=-10mA, f=100MHz
Min Typ Max Unit
-25
V
-25
V
-4
V
-50
nA
-50
nA
120
360
60
-0.4
V
-0.95 V
4.5
pF
250
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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