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| 2N4124 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2N4124 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z High Transition Frequency
TO â 92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
0.2
350
357
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= 0.01mA,IE=0
30
V
V(BR)CEO IC=1mA,IB=0
25
V
V(BR)EBO IE=0.01mA,IC=0
5
V
ICBO
VCB=20V,IE=0
50
nA
IEBO
VEB=3V,IC=0
50
nA
hFE(1)
VCE=1V, IC=2mA
120
360
hFE(2)
VCE=1V, IC=50mA
60
VCE(sat) IC=50mA,IB=5mA
0.3
V
VBE (sat) IC=50mA,IB=5mA
0.95
V
Cob
VCB=5V,IE=0, f=1MHz
4
pF
fT
VCE=20V,IC=10mA, f=100MHz 300
MHz
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