1SV310 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VCO FOR UHF BAND RADIO)

Features
High Capacitance Ratio:C1V/C4V=2.1(Typ.)
Low Series Resistance:rs=0.28 (Typ.)
Product specification
1SV310
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Sym bol
VR
IR
C1V
C4V
C1V/C4V
rs
Conditions
IR = 1 A
VR = 10 V
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
VR = 1V, f = 470 MHz
M in
10
9.7
4.45
1.8
Typ
2.1
0.28
Max
3
11.1
5.45
0.4
Unit
V
nA
pF
Marking
Marking
V1
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1