1SV276 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)

Features
High Capacitance Ratio:C1V/C4V = 2.0Typ.)
Low Series Resistance:rs = 0.22 (Typ.)
Product specification
1SV276
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Sym bol
VR
IR
C1V
C4V
C1V/C4V
rs
Conditions
IR = 1 A
VR = 10 V
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
VR = 1V, f = 470 MHz
M in
Typ
Max
Unit
10
V
3
nA
15
16
17
pF
7
8
8.5
1.8
2.0
0.22
0.4
Marking
Marking
TL
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