1SV262 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (CATV TUNING)

Product specification
1SV262
Features
High Capacitance Ratio:C2V/C25V = 8(Typ.)
Low Series Resistance:rs = 0.6 (Typ.)
Excellent C-V Characteristics,and Small Tracking Error.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
34
V
VRM
36(RL = 10 K )
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Sym bol
Conditions
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 32 V
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
Capacitance Ratio
C2V/C25V
C25V/C28V
Series Resistance
rs
VR = 5V, f = 470 MHz
Note :
Available in m atched group for capacitance to 2.0% .
C (M a x.)-C (M in .)
C (M in .)
(VR=2~25V)
0.020
M in
34
33
2.6
12
1.03
Typ
35.5
2.85
12.5
0.6
Max
10
38
3.0
0.8
Unit
V
nA
pF
Marking
Marking
TD
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