1SV252 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)

Features
Product specification
1SV252
Absolute Maxim um Ratings Ta = 25
P aram eter
Reverse voltage
Forward current
Junction Temperature
Storage temperature
Symbol
VR
IF
Tj
Tstg
Rating
50
50
125
-55 to +125
Unit
V
mA
Electrical Characteristics Ta = 25
P aram eter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Voltage
VR
IR = 10 A
50
V
Reverse Current
IR
VR = 50 V
0.1
A
Forward voltage
VF
IF = 50 mA
0.93
0.98
V
Total capacitance (Note 1)
CT
VR = 50 V, f = 1 MHz
0.2
0.4
pF
Series resistance
rS
IF = 10 mA, f = 100 MHz
3.5
10
Note
1. CT is measured by 3 terminal method with capacitance bridge.
Marking
Marking
BE
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