1SV128 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)

Product specification
1SV128
Features
Small Total Capacitance : CT = 0.25 pF(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
Param eter
R everse V oltage
Forward Current
Junction Tem perature
Storage tem perature
Sym bol
VR
IF
Tj
T stg
V alue
50
50
125
-55 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Reverse Current
Forward Voltage
Total Capacitance
Series Resistance
Minority Carrier Life Time
Symbol
Conditions
Min
Typ
Max
Unit
VR
IR = 10 A
50
V
IR
VR = 50 V
0.1
A
VF
IF = 50 mA
0.95
V
CT
VR =50 V, f = 1 MHz
0.25
pF
rs
IF = 10 mA, f = 100 MHz
7
ô
IF = 10 mA, IR = 6 mA
400
ns
Marking
Marking
BB
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