1SS401 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATIONS)

Product specification
1SS401
Features
Low forward voltage:VF(3) = 0.38 V(Typ)
Low reverse current:IR = 50 A
Small total capacitance:CT = 46 pF(Typ)
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
(*) Unit rating.Total rating = Unit rating 0.7
Symbol
VRM
VR
IFM
IO
P
Tj
Tstg
Rating
25
20
700
300
100
125
-55 to +125
Unit
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse Current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
CT
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 300 mA
VR = 20 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.16
0.22
V
0.38
0.45
50
A
46
pF
Marking
Marking
D9
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