1SS396 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Product specification
1SS396
Features
Small package
Low forward voltage :VF =0.23V(Typ).
Low reverse current: IR = 5 A(Max.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Maximum(Peak) Reverse Voltage
VRM
45
V
Reverse Voltage
VR
40
V
Maximum(Peak) Forward Current
IFM
300*
mA
Average Rectified Current
IO
100*
mA
Surge Current (10 ms)
IFSM
1*
A
Power Dissipation
P
150
mW
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 to +125
Poerating Temperature
Topr
-40 to +100
* Unit Rating.Total Rating = Unit Rating 0.7
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
Min
Typ
0.28
0.36
0.54
18
1.Base
2.Emitter
3.collector
Max
Unit
V
0.6
5
A
25
pF
Marking
Marking
T9
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