1SS395 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

Features
Low forward voltage:VF(2) = 0.23 V(Typ) @ IF = 5mA
Product specification
1SS395
Absolute Maxim um Ratings Ta = 25
Param eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 m s)
Power dissipation
Junction Tem perature
Storage Tem perature range
Operating tem perature range
(*) Unit rating.Total rating = Unit rating 0.7
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Topr
Rating
15
10
200(*)
100(*)
1(*)
100
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse Current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
CT
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.18
0.23
0.30
V
0.35
0.50
20
A
20
40
pF
Marking
Marking
S9
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