1SS393 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Product specification
1SS393
Features
Low forward voltage:VF(3) = 0.54 V(Typ.)
Low reverse current:IR = 5 A
Absolute M axim um Ratings Ta = 25
Param eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward Current
Surge current (10 m s)
Power dissipation
Junction Tem perature
Storage Tem perature range
Operating tem perature range
(*) Unit rating.Total rating = Unit rating 1.5
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Topr
R a tin g
45
40
300(*)
100(*)
1(*)
100
125
-55 to +125
-40 to +100
U n it
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.28
0.36
V
0.54
0.6
5
A
18
25
pF
Marking
Marking
R9
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