1SS387 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Product specification
1SS387
Features
Small Package
Low forward voltage :VF(3) = 0.98V(TYP.)
Fast Forward Voltage :trr = 1.6ns(TYP.)
Small Total Capacitance :CT = 0.5pF(TY
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maxim um Ratings Ta = 25
Characteristic
Sym bol
Rating
Maximum (Peak) reverse voltage
VRM
85
Reverse voltage
VR
80
Maximum (Peak) forward current
IFM
200
Average forwrad current
IO
100
Surge current (10 ms)
IFSM
1
Power dissipation
P
150*
Junction temperature
Tj
125
Storage temperature range
Tst g
-55 to + 125
* : Mounted on a glass epoxy circuit borad of 20 20mm, pad dimension of 4
Unit
V
V
mA
mA
A
mW
4mm.
Electrical Characteristics Ta = 25
Characteristic
Symbol
Continuous forward voltage
VF
Reverse current
IR
Total capacitance
CT
Reverse recovery time
trr
Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.62
0.75
V
0.97
1.2
0.1
A
0.5
0.5
3.0
pF
1.6
4.0
ns
Marking
Marking
C1
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