1SS377 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING)

Product specification
1SS377
Features
Small package
Low forward voltage :VR =0.23V(Typ). @IF = 5mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maxim um Ratings Ta = 25
P aram eter
Maxim um (Peak) Reverse Voltage
Reverse Voltage
Maxim um (Peak) Forward Current
Average Rectified Current
Surge Current (10 ms)
Power Dissipation
Junction Tem perature
Storage Temperature Range
Poerating Tem perature
* Unit Rating.Total Rating = Unit Rating
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Topr
1.5.
Rating
15
10
200*
100*
1*
150
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1.0 MHz
Min
Typ
0.18
0.23
0.35
20
1.Base
2.Emitter
3.collector
Max
Unit
0.3
V
0.5
20
A
40
pF
Marking
Marking
O9
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