1SS373 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

Features
Small Package
Low forward voltage :VF = 0.23V(TYP.) IF = 5mA
Product specification
1SS373
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Characteristic
Maximum (Peak) reverse voltage
Reverse voltage
Maximum (Peak) forward current
Average forwrad current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operaring temperature range
* : Mounted on a glass epoxy circuit borad of 20
Symbol
VRM
VR
IFM
IO
IFSM
P*
Tj
Rating
15
10
200
100
1
150
125
Unit
V
V
mA
mA
A
mW
Tstg
-55 to + 125
To pr
-40 to + 100
20mm, pad dimension of 4 4mm.
Electrical Characteristics Ta = 25
Characteristic
Symbol
Continuous forward voltage
VF
Reverse current
IR
Total capacitance
Cd
Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0 V, f = 1 MHz;
Min
Typ
Max
Unit
0.18
0.23
0.3
V
0.35
0.5
20
A
20
40
pF
Marking
Marking
S4
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