1SS372 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

Features
Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA
Product specification
1SS372
Absolute Maxim um Ratings Ta = 25
P aram eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction Tem perature
Storage Temperature range
Operating Tem perature Range
(*) Unit rating.Total rating = Unit rating 0.7
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
Rating
15
10
200(*)
100(*)
1(*)
100
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.18
0.23
0.30
V
0.35
0.50
20
A
20
40
pF
Marking
Marking
N9
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