1SS370 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)

Product specification
1SS370
Features
Low forward voltage :VF(3) = 0.9 V(Typ)
Fast reverse recovery time :trr = 60ns (MAX.)
Small total capacitance
:CT = 1.5 pF(Typ)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VRM
250
V
VR
200
V
IO
100
mA
IFM
300
mA
IFSM
2
A
P
100
mW
Tj
125
Tstg
-55 + 125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
IR(1)
IR(2)
CT
trr
Test Conditions
IF = 10 mA
IF = 100 mA
VR = 50 V
VR = 200 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Marking
Marking
F5
Min
Typ
Max
Unit
0.72
1.0
V
0.90
1.2
0.1
A
1.0
1.5
3.0
pF
10
60
ns
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