1SS367 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

Product specification
1SS367
Features
Small package:
Low forward voltage
:SC-70
:VF(3) = 0.23 V(Typ) @ IF = 5 mA
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P(*)
200
mW
Junction Temperature
Tj
125
Storage Temperature range
Tst g
-55 to +125
Operating temperature range
To pr
-40 to +100
(*) Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm.
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.18
0.23
0.3
V
0.35
0.5
20
A
20
40
pF
Marking
Marking
S4
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