1SS357 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Features
Low forward voltage
Low resistance current
Small package:
:VF(3) = 0.54 V(Typ)
:IR = 5 A (Max)
:SC-70
Product specification
1SS357
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P
200(*)
mW
Junction Temperature
Tj
125
Storage Temperature range
Tst g
-55 + 125
(*) Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm.
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Total capacitance
Sym bol
V F (1)
V F (2)
V F (3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
M in
Typ
Max
Unit
0.28
0.36
V
0.54
0.6
5
A
18
25
pF
Marking
Marking
S3
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