1SS352 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Features
Small Package
Low forward voltage
:VF(3) = 0.98 (Typ)
Fast reverse recovery time :trr = 1.6ns (Typ)
Small total capacitance
:CT = 0.5 pF(Typ)
Product specification
1SS352
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
P arem eter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Forward current
IFM
200
mA
maximum (peak) voltage current
Io
100
mA
Surge current t=1s
IFSM
1
A
Power dissipation
P
200(*)
mW
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 to+ 125
(*)Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm
Electrical Characteristics Ta = 25
Parem eter
Sym bol
Forward Volatge
VF
Reverse Current
IR
Total Capacitance
CT
Reverse Recovery Tim e
trr
Test Conditions
IF = 1 m A
IF = 10 m A
IF = 100 mA
VR = 30 V;
VR = 80 V;
VR =0, f =1 MHz
IF = 10 mA;
Typ.
0.62
0.75
0.98
0.5
1.6
Max
1.2
0.1
0.5
3
4
Unit
V
A
pF
ns
Marking
Marking
C1
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