1SS349 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Product specification
1SS349
Features
Small package
Low forward voltage: VF3 = 0.49V(Typ).
Low voltage current: :IR = 50 A(Max).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
3
1
2
Absolute Maxim um Ratings Ta = 25
P aram eter
Maximum(Peak) Reverse Voltage
Reverse Voltage
Average Rectified Current
Maximum(Peak) Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Poerating Temperature
Symbol
VRM
VR
IO
IFM
P
Tj
Tstg
Topr
Rating
25
20
1000
3000
200
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Total capacitance
CT
Test Conditions
IF = 100mA
IF = 500mA
IF = 1000mA
VR = 20V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.34
0.42
V
0.49
0.55
50
A
250
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1