1SS337 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Product specification
1SS337
Features
Small package
Low forward voltage: VF3 = 0.88V(Typ).
Fast reverse recovery time: trr = 6ns(Typ).
Small total capacitance : CT = 1.6pF(Typ).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maxim um Ratings Ta = 25
Param eter
Maxim um (Peak) Reverse Voltage
Reverse Voltage
Maxim um (Peak) Forward Current
Average Rectified Current
Surge Current (10 m s)
Power Dissipation
Junction Tem perature
Storage Tem perature Range
* Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Rating
85
80
600*
200*
6*
150
150
-55 to +150
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
IR
Reverse current
IR
capacitance
Ct
Reverse recovery time
trr
Test Conditions
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 30 mA
Min
Typ
Max
Unit
0.66
0.8
V
0.88
1.2
0.25
A
0.5
1.6
pF
6
20
ns
Marking
Marking
J9
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