1SS336 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Product specification
1SS336
Features
Small package
Low forward voltage: VF3 = 0.84 V(Typ).
Fast reverse recovery time: trr = 7ns(Typ).
Small total capacitance : CT = 7pF(Typ).
Absolute Maximum Ratings Ta = 25
Parameter
Maximum(Peak) Reverse Voltage
Reverse Voltage
Maximum(Peak) Forward Current
Average Rectified Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
* Unit Rating.Total Rating = Unit Rating 1.5
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
IR
Reverse current
IR
capacitance
Ct
Reverse recovery time
trr
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Rating
85
80
600*
200*
6*
150
150
-55 to +150
Unit
V
V
mA
mA
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Test Conditions
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 30 mA
Min
Typ
Max
Unit
0.64
0.78
V
0.84
1.2
0.25
A
0.5
7
pF
7
20
ns
Marking
Marking
I9
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