1SS322 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Product specification
1SS322
Features
Low forward voltage:VF(3) = 0.54 V(Typ)
Low reverse current:trr = 5 A (Typ)
A bsolute M axim um R atings T a = 25
Param eter
M axim um (peak) reverse voltage
R everse voltage
M axim um (peak) forward current
Average forward Current
P ower dissipation
Junction Tem perature
Storage Tem perature range
(*) U nit rating.Total rating = U nit rating
Sym bol
VRM
VR
IFM
IO
P
Tj
T stg
1.5
R ating
45
40
300
100
100
125
-55 to +125
U nit
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.28
0.36
V
0.54
0.60
5
A
18
25
pF
Marking
Marking
A9
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