1SS315 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (UHF BAND MIXER APPLICATIONS)

Product specification
1SS315
Features
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute M axim um R atings Ta = 25
Param eter
M axim um (Peak) R everse Voltage
Forward Current
Junction tem perature
Storage tem perature range
S ym bol
VRM
IF
TJ
T stg
R a tin g
5
30
125
-55 to +125
U n it
V
mA
Electrical C haracteristics Ta = 25
Param eter
Forward voltage
Reverse current
R everse voltage
Total capacitance
S ym bol
VF
IF
VR
CT
C onditions
IF = 2 m A
VF =0.5 V
VR =0.5 V
VR=0.2 V,f=1M Hz
M in
Typ
Max
U nit
0.25
V
30
mA
25
A
0.6
pF
Marking
Marking
S2
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