1SS309 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)

Features
Low forward voltage: VF (3) = 0.90V (typ.)
Fast reverse recovery time:trr = 1.6ns(typ.)
Small total Capacitance:CT = 0.9pF(typ.)
5
4
1
2
3
Product specification
1SS309
Unit: mm
Absolute Maxim um Ratings Ta = 25
P aram eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction tem perature
Storage temperature range
Note
1.Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Total capacitance
Reverse recovery tim e
Sym bol
V F (1)
V F (2)
V F (3)
IR(1)
IR(2)
CT
trr
Conditions
IF = 1 m A
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR=0 V,f=1 MHz
IF = 10 mA
Rating
85
80
300⁽¹⁾
100⁽¹⁾
2⁽¹⁾
200
125
-55 to +125
M in
Unit
V
V
mA
mA
A
mW
Typ
0.60
0.72
0.92
0.9
1.6
Max
1.20
0.1
0.5
3.0
4.0
Unit
V
A
pF
ns
Marking
Marking
A2
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