1SS306 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS)

Features
Low forward voltage :VF(2) = 0.9 V(Typ)
Fast reverse recovery time :trr = 30 ns (Typ)
Small total capacitance :CT = 1.5 pF(Typ)
Product specification
1SS306
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current *
Maximum (peak) forward current *
Surge current (10 ms) *
Power dissipation
Junction Temperature
Storage Temperature
* Unit rating.Total rating = Unit rating X1.5
Symbol
Rating
Unit
VRM
250
V
VR
200
V
IO
100
mA
IFM
300
mA
IFSM
2
A
P
150
mW
Tj
125
Tstg
-55 + 125
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
IR(1)
IR(2)
Ct
trr
Test Conditions
IF = 1 mA
IF = 100mA
VR = 50 V
VR = 200 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.72
1.0
V
0.9
1.2
0.1
A
1.0
1.5
3.0
pF
30
60
ns
Marking
Marking
A3
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