1SS303 Datasheet, PDF (1/1 Pages) NEC – SILICON SWITCHING DIODES

Product specification
1SS303
Features
Low capacitance: Ct = 2.5 pF TYP.
High speed switching: trr = 4.0 ns MAX.
Wide applications including switching, limitter, clipper.
Double diode configuration assures economical use.
Absolute M axim um R atings T a = 25
Param eter
P eak R everse V oltage
D C R everse V oltage
Surge Current (1 s) Note 1
Surge Current (1 s)
Peak Forward Current Note 1
Peak Forward Current
A verage R ectified C urrent (N ote 1)
A verage R ectified C urrent
Junction Tem perature
Storage Tem perature Range
Junction to A m bient (N ote 1)
Junction to A m bient
N o te
1.B oth diodes loaded sim ultaneously.
Sym bol
VRM
VR
IFSM
IFSM
IFM
IFM
IO
IO
Tj
T stg
R th ( j-a )
R th ( j-a )
R ating
75
50
6.0
4.0
450
300
150
100
150
-55 to +150
1.0
0.85
U nit
V
V
A
A
mA
mA
mA
mA
/m W
/m W
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
Ct
trr
Test Conditions
IF = 1 mA
IF = 50 mA
IF = 100 mA
VR = 50 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.72
1.0
0.88
1.1
V
1.0
1.2
0.1
A
2.5
4.0
pF
4.0
ns
Marking
Marking
A4
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