1SS301 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)

Product specification
1SS301
Features
Low forward voltage:VF(3) = 0.90 V(Typ)
Fast reverse recovery time:trr = 1.6 ns (Typ)
Small total capacitance:CT = 0.9 pF(Typ)
Absolute Maxim um Ratings Ta = 25
Param eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 m s)
Power dissipation
Junction Tem perature
Storage Tem perature
(*) Unit rating.Total rating = Unit rating 1.5
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
Rating
85
80
300(*)
100(*)
2(*)
100
125
-55 to +125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.60
0.72
V
0.90
1.2
0.1
A
0.5
0.9
3.0
pF
1.6
4.0
ns
Marking
Marking
B3
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1