1SS271 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VHF~UHF MIXER APPLICATION)

Product specification
1SS271
Features
Small Delat forward voltage:ÄVF = 10 mV(Max)
Small Delat total capacitance: ÄCT = 0.1pF(Max)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
P aram eter
R everse V oltage
Forw ard C urrent
Junction tem perature
S torage tem perature range
Sym bol
VR
IF
TJ
T stg
R ating
6
30
125
-55 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse voltage
VR
IR =1 ìA
6
V
Reverse current
IR
VR =15 V
0.5
A
Forward voltage
IF = 0.1 mA
0.3
VF
V
IF = 10 mA
0.42
0.5
0.55
Total capacitance
CT
VR=0 V,f=1MHz
0.8
1.0
pF
Delat forward voltage
ÄVF
IF = 10 mA (Note 1)
10
mV
Delat total capacitance
ÄCT
VR=0 V,f=1MHz (Note 1)
0.1
pF
Note
Difference between 2 Devices in 1 package
Marking
Marking
BD
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