1SS268 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VHF TUNER BAND SWITCH APPLICATIONS)

Product specification
1SS268
Features
Small Total capacitance: CT = 1.2pF(Max)
Low series resistance: rs = 0.6 (Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute M axim um R atings Ta = 25
Param eter
R everse V oltage
Forward Current
Junction tem perature
Storage tem perature range
S ym bol
VR
IF
TJ
T stg
R ating
30
50
125
-55 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Reverse voltage
Total capacitance
Series resistance
Symbol
C o n d itio n s
M in
Typ
Max
U n it
VF
IF = 2 mA
0.85
V
IR
VR =15 V
0.1
A
VR
IR =1 A
30
V
CT
VR=6 V,f=1MHz
0.8
1.2
pF
rs
IF = 2 mA, f = 100 MHz
0.6
0.9
Marking
Marking
BF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1