1SS187 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Product specification
1SS187
Features
Fast reverse recovery time:trr=1.6ns(typ.)
Diode capacitance :Cd=2.2pF(typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Maximun reverse voltage
Reverse voltage
Average forward current
Maximum forward current
Surge current
Power dissipation
Junction temperature
Storage temperature range
Symbol
VRM
VR
IO
IFM
IFSM
PD
TJ
Tstg
Rating
85
80
100
300
2
150
125
-55 to 125
Unit
V
V
mA
mA
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse voltage leakage current
Diode capacitance
Reverse recovery time
Symbol
Testconditons
IF=1mA
VF _IF=10mA
IF=100mA
VR=30V
IR
VR=80V
CD VR=0V, f=1MHz
trr IF=10mA
Marking
Marking
D3
Min Typ Max Unit
0.61
0.74
V
0.92 1.2
0.1
A
0.5
2.2 4 pF
1.6 4 ns
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